In the manufacturing process of SiC (silicon carbide) substrate, the cutting of SiC ingot is a crucial step. It not only directly determines the surface quality and dimensional accuracy of the substrate, but also has a decisive influence on cost control. The key parameters determined by the cutting process, such as surface roughness (Ra), total thickness deviation (TTV), warping (BOW) and bending (WARP), have a profound impact on the final quality, yield and production cost of the substrate. In addition, the quality of cutting is also directly related to the efficiency and cost of subsequent grinding and polishing processes. Therefore, the development and progress of SiC ingot cutting technology is of great significance to improve the level of the entire silicon carbide substrate manufacturing industry.

 

 

Diamond saw blade, circular saw blade, elimination, large Ra difference, large warpage, wide slit, slow speed, low precision, loud noise

Electric spark: wire + current, eliminated, wide slit, large surface burn layer thickness

Mortar line: copper-plated stainless steel wire + mortar, thin wafer, high yield, low loss, slow speed and low precision, pollution, low life of wire saw

Diamond wire: consolidated abrasive + diamond wire, high efficiency, narrow slit, environmental protection, deep damage layer, fast line wear, substrate warping

 

First, the status quo of SiC ingot cutting technology

With the advancement of science and technology, SiC ingot cutting technology has made remarkable progress. At present, the mainstream cutting technology mainly includes mortar wire cutting, diamond wire cutting and laser stripping technology. These technologies differ in cutting efficiency, surface quality, cost, etc., providing a variety of options for SiC substrate manufacturing.

 

Second, the main cutting technology characteristics analysis

1. Mortar wire cutting: As a traditional cutting technology, mortar wire cutting cuts SiC ingot through the line containing abrasive and mortar. Although this method is low cost and easy to apply in mass production, it is slow to cut and may leave a deep damaged layer on the substrate surface, affecting subsequent processing efficiency and substrate quality.

 

 

2. Diamond wire cutting: Diamond wire cutting technology uses diamond particles as abrasives to cut SiC ingot through high-speed rotating lines. This method not only has fast cutting speed, but also shallow surface damage layer, which helps to improve the quality and yield of substrate. Therefore, diamond wire cutting technology is gradually widely used in the field of SiC substrate manufacturing.

 

 

3. Laser stripping technology: Laser stripping technology is an emerging cutting method, which uses the thermal effect of the laser beam to separate the SiC ingot. This technology can provide very precise cuts, significantly reducing substrate damage, and thus improving the quality of the substrate. However, due to the relatively high cost at present, laser stripping technology is mainly used in high-end fields.

 

Third, the impact of cutting technology on substrate quality and subsequent processes

The choice of cutting technology not only affects the direct quality of SiC substrate, but also has an important impact on its subsequent processing. High-quality cutting technology can reduce substrate surface damage, reduce the difficulty and cost of grinding and polishing, thereby improving the efficiency and effectiveness of the entire production process. Therefore, in the manufacturing process of SiC substrate, it is very important to choose the right cutting technology.

 

In summary, the development and progress of SiC ingot cutting technology is of great significance for improving the quality, efficiency and cost control of SiC substrate. With the continuous progress of science and technology and the intensification of market competition, the future SiC ingot cutting technology will develop in the direction of more efficient, more accurate and more economical. At the same time, with the rapid development of new energy, semiconductor and other fields, the market demand for SiC substrate will continue to grow, providing a broad space and opportunities for the development of SiC ingot cutting technology.